Valley physics in tin (II) sulfide
نویسندگان
چکیده
منابع مشابه
Antimony-doped Tin(II) Sulfide Thin Films
Thin-film solar cells made from earth-abundant, inexpensive, and non-toxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and non-toxic solar cells. SnS has always been observed to be a p-type semiconduc...
متن کاملFacile solution synthesis and photoelectric properties of monolithic tin(II) sulfide nanobelt arrays.
The tremendous future energy demand and environmental concerns prompt the lasting search for new materials for low-cost and high-efficiency solar cells. SnS, as a low-cost, earth-abundant, and environmentally friendly material with proper band gap and absorption coefficient, has received attention as a potential candidate for solar absorber, but it is still under-developed due to insufficient c...
متن کاملEarth‐Abundant Tin Sulfide‐Based Photocathodes for Solar Hydrogen Production
Tin-based chalcogenide semiconductors, though attractive materials for photovoltaics, have to date exhibited poor performance and stability for photoelectrochemical applications. Here, a novel strategy is reported to improve performance and stability of tin monosulfide (SnS) nanoplatelet thin films for H2 production in acidic media without any use of sacrificial reagent. P-type SnS nanoplatelet...
متن کاملPhotoexcited Properties of Tin Sulfide Nanosheet-Decorated ZnO Nanorod Heterostructures
In this study, ZnO-Sn2S3 core-shell nanorod heterostructures were synthesized by sputtering Sn2S3 shell layers onto ZnO rods. The Sn2S3 shell layers consisted of sheet-like crystallites. A structural analysis revealed that the ZnO-Sn2S3 core-shell nanorod heterostructures were highly crystalline. In comparison with ZnO nanorods, the ZnO-Sn2S3 nanorods exhibited a broadened optical absorption ed...
متن کاملModeling Tin Sulfide Grain Growth during Post-Processing
Tin sulfide (SnS) is a semiconductor material with both an indirect and direct bandgap at 1.1 eV and 1.3 eV respectively. Due to the availability of tin and sulfur, SnS is seen as a feasible alternative to the thin film CIGS and CdTe solar cells. With a direct bandgap of 1.1 eV and the ability to be produced as a thin film, the SnS solar cell should achieve high levels of efficiency of approxim...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2016
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.93.045431